unisonic technologies co., ltd 7N65K preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-770. c 7.4 a , 650v n-channel power mosfet ? description the utc 7N65K is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in switching power supplies and adaptors. ? features * r ds ( on ) < 1.4 ? @ v gs = 10 v * ultra low gate charge (typical 29 nc ) * low reverse transfer capacitance ( c rss = typical 16pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 7N65Kl-ta3-t 7N65Kg-ta3-t to-220 g d s tube 7N65Kl-tf3-t 7N65Kg-tf3-t to-220f g d s tube 7N65Kl-tf1-t 7N65Kg-tf1-t to-220f1 g d s tube 7N65Kl-tq2-t 7N65Kg-tq2-t to-263 g d s tube 7N65Kl-tq2-r 7N65Kg-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source
7N65K preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-770. c ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 7.4 a drain current continuous i d 7.4 a pulsed (note 2) i dm 29.6 a avalanche energy single pulsed (note 3) e as 200 mj repetitive (note 2) e ar 14.2 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 p d 142 w to-220f/to-220f1 48 w to-263 50 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 8.16mh, i as = 7a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 7.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.88 c/w to-220f/to-220f1 2.6 c/w to-263 2.5 c/w
7N65K preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-770. c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650v, v gs = 0v 1 a gate- source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.67 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.5 4.5 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 3.7a 1.1 1.4 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 1400 pf output capacitance c oss 180 pf reverse transfer capacitance c rss 16 21 pf switching characteristics turn-on delay time t d ( on ) v dd =325v, i d =7.4a r g =25 ? (note 1, 2) 70 ns turn-on rise time t r 80 170 ns turn-off delay time t d ( off ) 140 ns turn-off fall time t f 50 130 ns switching characteristics total gate charge q g v ds =520v, i d =7.4a v gs =10 v (note 1, 2) 29 38 nc gate-source charge q gs 7 nc gate-drain charge q gd 14.5 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 7.4 a 1.4 v maximum continuous drain-source diode forward current i s 7.4 a maximum pulsed drain-source diode forward current i sm 29.6 a reverse recovery time t r r v gs = 0v, i s = 7.4 a di f / dt = 100a/ s (note 1) 320 ns reverse recovery charge q rr 2.4 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7N65K preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-770. c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
7N65K preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-770. c ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l pulse width 1 s duty factor 0.1% v dd switching test circuit switching waveforms 50k ? 0.3f dut same type as d.u.t. 0.2f 12v v gs 3ma v ds gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
7N65K preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-770. c utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
